FMD15-06KC5
| Parameters | |
|---|---|
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 165m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 790μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 15A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 15A |
| Drain-source On Resistance-Max | 0.165Ohm |
| DS Breakdown Voltage-Min | 600V |
| Avalanche Energy Rating (Eas) | 522 mJ |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | ISOPLUSi5-Pak™ |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2009 |
| Series | CoolMOS™ |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | HIGH RELIABILITY, UL RECOGNIZED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 5 |
| JESD-30 Code | R-PSIP-T5 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | ISOLATED |
See Relate Datesheet
