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FMMT6517TA

FMMT6517TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-FMMT6517TA
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 873
  • Description: FMMT6517TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available at Feilidi (Kg)

Details

Tags

Parameters
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 50mA 10V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 5mA, 50mA
Collector Emitter Breakdown Voltage 350V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 1V
Max Breakdown Voltage 350V
Collector Base Voltage (VCBO) 350V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 500mA
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Voltage - Rated DC 350V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 500mA
Frequency 50MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number FMMT6517
Number of Elements 1
Element Configuration Single
Power Dissipation 330mW
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350V
See Relate Datesheet

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