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FP10R12W1T4B11BOMA1

FP10R12W1T4B11BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-FP10R12W1T4B11BOMA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 571
  • Description: FP10R12W1T4B11BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Turn On Time 108 ns
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 10A
Turn Off Time-Nom (toff) 500 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 600pF @ 25V
REACH SVHC No SVHC
Factory Lead Time 1 Week
RoHS Status RoHS Compliant
Lead Free Contains Lead
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Number of Pins 23
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 23
ECCN Code EAR99
Max Power Dissipation 105W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 7
Configuration Three Phase Inverter
Case Connection ISOLATED
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.85V
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 20A
See Relate Datesheet

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