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FP10R12W1T4B3BOMA1

IGBT MODULE VCES 600V 100A


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-FP10R12W1T4B3BOMA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 371
  • Description: IGBT MODULE VCES 600V 100A (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 21
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X21
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 105W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 20A
Turn On Time 108 ns
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 10A
Turn Off Time-Nom (toff) 500 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 600pF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet

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