banner_page

FP150R07N3E4BOSA1

IGBT MODULE VCES 650V 150A


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-FP150R07N3E4BOSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 301
  • Description: IGBT MODULE VCES 650V 150A (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 43
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 43
JESD-30 Code R-XUFM-X43
Number of Elements 7
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 430W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 150A
Turn On Time 180 ns
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 150A
Turn Off Time-Nom (toff) 450 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 9.3nF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good