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FP25R12KT4B15BOSA1

IGBT MOD 1200V 25A 160W


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-FP25R12KT4B15BOSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 440
  • Description: IGBT MOD 1200V 25A 160W (Kg)

Details

Tags

Parameters
Additional Feature UL APPROVED
Max Power Dissipation 160W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X24
Number of Elements 7
Configuration Three Phase Inverter
Case Connection ISOLATED
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 25A
Collector Emitter Saturation Voltage 1.85V
Turn On Time 210 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 25A
Turn Off Time-Nom (toff) 620 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 1.45nF @ 25V
RoHS Status RoHS Compliant
Lead Free Contains Lead
Factory Lead Time 1 Week
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 24
ECCN Code EAR99
See Relate Datesheet

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