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FP35R12W2T4B11BOMA1

Trans IGBT Module N-CH 1.2KV 54A 23-pin EASY2B-2


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-FP35R12W2T4B11BOMA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 166
  • Description: Trans IGBT Module N-CH 1.2KV 54A 23-pin EASY2B-2 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 23
ECCN Code EAR99
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X23
Number of Elements 7
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 215W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 54A
Turn On Time 43 ns
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 35A
Turn Off Time-Nom (toff) 510 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 2nF @ 25V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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