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FP75R07N2E4B11BOSA1

IGBT MODULE VCES 600V 75A


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-FP75R07N2E4B11BOSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 467
  • Description: IGBT MODULE VCES 600V 75A (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 31
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Packaging Bulk
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 31
ECCN Code EAR99
Additional Feature UL APPROVED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 7
Configuration Three Phase Inverter
Case Connection ISOLATED
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 650V
Max Collector Current 75A
Current - Collector Cutoff (Max) 1mA
Current - Collector (Ic) (Max) 75A
Turn On Time 45 ns
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 75A
Turn Off Time-Nom (toff) 320 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 4.6nF @ 25V
RoHS Status RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet

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