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FQA27N25

MOSFET N-CH 250V 27A TO-3P


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FQA27N25
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 921
  • Description: MOSFET N-CH 250V 27A TO-3P (Kg)

Details

Tags

Parameters
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 210W
Turn On Delay Time 32 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 110m Ω @ 13.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2450pF @ 25V
Current - Continuous Drain (Id) @ 25°C 27A Tc
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Rise Time 270ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 120 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 27A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Avalanche Energy Rating (Eas) 600 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 250V
Technology MOSFET (Metal Oxide)
Current Rating 27A
Number of Elements 1
Power Dissipation-Max 210W Tc
See Relate Datesheet

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