Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE, NOT REC (Last Updated: 1 week ago) |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-3P-3, SC-65-3 |
Number of Pins | 3 |
Weight | 6.401g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2000 |
Series | QFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Voltage - Rated DC | 500V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 28.4A |
Number of Elements | 1 |
Power Dissipation-Max | 310W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 310W |
Turn On Delay Time | 100 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 160m Ω @ 14.2A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 5600pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 28.4A Tc |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
Rise Time | 290ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 175 ns |
Turn-Off Delay Time | 250 ns |
Continuous Drain Current (ID) | 28.4A |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 500V |
Dual Supply Voltage | 500V |
Nominal Vgs | 5 V |
Height | 18.9mm |
Length | 15.8mm |
Width | 5mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |