FQA7N80C-F109
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Packaging | Tube |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Subcategory | FET General Purpose Power |
| Terminal Position | SINGLE |
| Terminal Form | THROUGH-HOLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | Not Qualified |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | N-CHANNEL |
| Drain Current-Max (Abs) (ID) | 7A |
| Drain-source On Resistance-Max | 1.9Ohm |
| Pulsed Drain Current-Max (IDM) | 28A |
| DS Breakdown Voltage-Min | 800V |
| Avalanche Energy Rating (Eas) | 580 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 198W |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
