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FQA90N15-F109

MOSFET 150V 90A N-Chan Power Trench


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FQA90N15-F109
  • Package: TO-3P-3, SC-65-3
  • Datasheet: PDF
  • Stock: 846
  • Description: MOSFET 150V 90A N-Chan Power Trench (Kg)

Details

Tags

Parameters
Turn-Off Delay Time 470 ns
Continuous Drain Current (ID) 90A
Gate to Source Voltage (Vgs) 25V
Drain to Source Breakdown Voltage 150V
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Series QFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 375W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 6W
Turn On Delay Time 105 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 90A Tc
Gate Charge (Qg) (Max) @ Vgs 285nC @ 10V
Rise Time 760ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 410 ns
See Relate Datesheet

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