Parameters | |
---|---|
Mounting Type | Through Hole |
Package / Case | TO-3P-3 Full Pack |
Surface Mount | NO |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Series | QFET® |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Terminal Finish | NOT SPECIFIED |
Technology | MOSFET (Metal Oxide) |
Terminal Position | SINGLE |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | unknown |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | COMMERCIAL |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 83W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | ISOLATED |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 34m Ω @ 17.8A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1.43pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 35.6A Tc |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
Drain to Source Voltage (Vdss) | 80V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±25V |
Drain Current-Max (Abs) (ID) | 35.6A |
Drain-source On Resistance-Max | 0.034Ohm |
Pulsed Drain Current-Max (IDM) | 142.4A |
DS Breakdown Voltage-Min | 80V |
Avalanche Energy Rating (Eas) | 450 mJ |
RoHS Status | ROHS3 Compliant |