Parameters | |
---|---|
Series | QFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 470mOhm |
Additional Feature | FAST SWITCHING |
Subcategory | Other Transistors |
Voltage - Rated DC | -200V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Current Rating | -11.5A |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 3.13W Ta 120W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.13W |
Case Connection | DRAIN |
Turn On Delay Time | 20 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 470m Ω @ 5.75A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 11.5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Rise Time | 195ns |
Drain to Source Voltage (Vdss) | 200V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 60 ns |
Turn-Off Delay Time | 40 ns |
Continuous Drain Current (ID) | 11.5mA |
Threshold Voltage | -5V |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | -200V |
Pulsed Drain Current-Max (IDM) | 46A |
Nominal Vgs | 5 V |
Height | 4.83mm |
Length | 10.67mm |
Width | 9.65mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 15 hours ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Weight | 1.31247g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2000 |