FQB34N20LTM
| Parameters | |
|---|---|
| Terminal Finish | Tin (Sn) |
| Voltage - Rated DC | 200V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Current Rating | 31A |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.13W Ta 180W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.13W |
| Case Connection | DRAIN |
| Turn On Delay Time | 45 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 75m Ω @ 15.5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 31A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 72nC @ 5V |
| Rise Time | 520ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 370 ns |
| Turn-Off Delay Time | 170 ns |
| Continuous Drain Current (ID) | 31A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 200V |
| Dual Supply Voltage | 200V |
| Avalanche Energy Rating (Eas) | 640 mJ |
| Nominal Vgs | 2 V |
| Feedback Cap-Max (Crss) | 67 pF |
| Height | 4.83mm |
| Length | 10.67mm |
| Factory Lead Time | 1 Week |
| Width | 9.65mm |
| Lifecycle Status | ACTIVE (Last Updated: 21 hours ago) |
| Radiation Hardening | No |
| Mount | Surface Mount |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Mounting Type | Surface Mount |
| Lead Free | Lead Free |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 2 |
| Weight | 1.31247g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2000 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 75mOhm |
See Relate Datesheet
