Parameters | |
---|---|
RoHS Status | ROHS3 Compliant |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
Number of Pins | 3 |
Weight | 1.31247g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2004 |
Series | Automotive, AEC-Q101, QFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
Terminal Finish | Tin (Sn) |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
JESD-30 Code | R-PSSO-G2 |
Number of Elements | 1 |
Power Dissipation-Max | 3.75W Ta 155W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.75W |
Case Connection | DRAIN |
Turn On Delay Time | 25 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 60m Ω @ 16.75A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2910pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 33.5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Rise Time | 250ns |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±25V |
Fall Time (Typ) | 210 ns |
Turn-Off Delay Time | 160 ns |
Continuous Drain Current (ID) | 33.5A |
Gate to Source Voltage (Vgs) | 25V |
Drain-source On Resistance-Max | 0.06Ohm |
Drain to Source Breakdown Voltage | -100V |
Avalanche Energy Rating (Eas) | 2200 mJ |
Radiation Hardening | No |