FQB8N90CTM
| Parameters | |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 171W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 40 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.9 Ω @ 3.15A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2080pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 6.3A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
| Rise Time | 110ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 70 ns |
| Turn-Off Delay Time | 70 ns |
| Continuous Drain Current (ID) | 6.3A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 900V |
| Pulsed Drain Current-Max (IDM) | 25A |
| Avalanche Energy Rating (Eas) | 850 mJ |
| Height | 4.83mm |
| Length | 10.67mm |
| Width | 9.65mm |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Weight | 1.31247g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
See Relate Datesheet
