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FQD17N08LTM

Trans MOSFET N-CH 80V 12.9A 3-Pin(2+Tab) DPAK T/R


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FQD17N08LTM
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: PDF
  • Stock: 321
  • Description: Trans MOSFET N-CH 80V 12.9A 3-Pin(2+Tab) DPAK T/R (Kg)

Details

Tags

Parameters
Rds On (Max) @ Id, Vgs 100m Ω @ 6.45A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 520pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12.9A Tc
Gate Charge (Qg) (Max) @ Vgs 11.5nC @ 5V
Rise Time 290ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 75 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 12.9A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 80V
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 80V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Current Rating 12.9A
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 2.5W Ta 40W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
See Relate Datesheet

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