Parameters | |
---|---|
Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Weight | 260.37mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2014 |
Series | QFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 140MOhm |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 200V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | 15A |
JESD-30 Code | R-PDSO-G2 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2.5W Ta 83W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Case Connection | DRAIN |
Turn On Delay Time | 16 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 140m Ω @ 7.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 15A Tc |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Rise Time | 133ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 62 ns |
Turn-Off Delay Time | 38 ns |
Continuous Drain Current (ID) | 15A |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 200V |
Pulsed Drain Current-Max (IDM) | 60A |
Max Junction Temperature (Tj) | 150°C |
Nominal Vgs | 5 V |
Height | 2.517mm |
Length | 6.6mm |
Width | 6.1mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |