FQD4N50TM
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2000 |
| Series | QFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 2.7Ohm |
| Voltage - Rated DC | 500V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 2.6A |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.5W Ta 45W Tc |
| Element Configuration | Single |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 12 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 2.7 Ω @ 1.3A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Rise Time | 45ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 30 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 2.6A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 500V |
| Height | 2.3mm |
| Length | 6.6mm |
| Width | 6.1mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
