FQD6N60CTM-WS
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | QFET® |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 80W Tc |
| Element Configuration | Single |
| Power Dissipation | 80W |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 2 Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 810pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 4A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Rise Time | 45ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 45 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | 4A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
