Parameters | |
---|---|
Number of Elements | 1 |
Power Dissipation-Max | 2.5W Ta 50W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Case Connection | DRAIN |
Turn On Delay Time | 13 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 700m Ω @ 2.75A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 5.5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Rise Time | 75ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 35 ns |
Turn-Off Delay Time | 25 ns |
Continuous Drain Current (ID) | 5.5A |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 300V |
Pulsed Drain Current-Max (IDM) | 22A |
Height | 2.3mm |
Length | 6.6mm |
Width | 6.1mm |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Number of Pins | 3 |
Weight | 260.37mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2000 |
Series | QFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 2 |
ECCN Code | EAR99 |
Resistance | 700mOhm |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 300V |
Technology | MOSFET (Metal Oxide) |
Terminal Form | GULL WING |
Current Rating | 5.5A |
JESD-30 Code | R-PSSO-G2 |