FQH8N100C
| Parameters | |
|---|---|
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 225W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 225W |
| Turn On Delay Time | 50 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Factory Lead Time | 1 Week |
| Rds On (Max) @ Id, Vgs | 1.45 Ω @ 4A, 10V |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Input Capacitance (Ciss) (Max) @ Vds | 3220pF @ 25V |
| Package / Case | TO-247-3 |
| Current - Continuous Drain (Id) @ 25°C | 8A Tc |
| Number of Pins | 3 |
| Gate Charge (Qg) (Max) @ Vgs | 70nC @ 10V |
| Weight | 6.39g |
| Transistor Element Material | SILICON |
| Rise Time | 95ns |
| Operating Temperature | -55°C~150°C TJ |
| Drain to Source Voltage (Vdss) | 1000V |
| Packaging | Tube |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Published | 2013 |
| Vgs (Max) | ±30V |
| Series | QFET® |
| Fall Time (Typ) | 80 ns |
| Turn-Off Delay Time | 122 ns |
| JESD-609 Code | e3 |
| Continuous Drain Current (ID) | 8A |
| JEDEC-95 Code | TO-247AB |
| Pbfree Code | yes |
| Gate to Source Voltage (Vgs) | 30V |
| Part Status | Active |
| Drain Current-Max (Abs) (ID) | 8A |
| Drain to Source Breakdown Voltage | 1kV |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Avalanche Energy Rating (Eas) | 850 mJ |
| Height | 20.82mm |
| ECCN Code | EAR99 |
| Length | 15.87mm |
| Terminal Finish | Tin (Sn) |
| Width | 4.82mm |
| RoHS Status | ROHS3 Compliant |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
See Relate Datesheet
