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FQI4N90TU

MOSFET N-CH 900V 4.2A I2PAK


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FQI4N90TU
  • Package: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Datasheet: PDF
  • Stock: 736
  • Description: MOSFET N-CH 900V 4.2A I2PAK (Kg)

Details

Tags

Parameters
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 3.13W
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.3 Ω @ 2.1A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.2A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Rise Time 70ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 4.2A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 900V
Avalanche Energy Rating (Eas) 570 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I2Pak, TO-262AA
Weight 2.084g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 3.3Ohm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 900V
Technology MOSFET (Metal Oxide)
Current Rating 4.1A
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 3.13W Ta 140W Tc
See Relate Datesheet

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