Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 weeks ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
Weight | 2.084g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2013 |
Series | QFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | FAST SWITCHING |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 600V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 5A |
JESD-30 Code | R-PSIP-T3 |
Number of Elements | 1 |
Power Dissipation-Max | 3.13W Ta 100W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 3.13W |
Turn On Delay Time | 10 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.5 Ω @ 2.25A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 670pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 4.5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
Rise Time | 42ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 46 ns |
Turn-Off Delay Time | 38 ns |
Continuous Drain Current (ID) | 4.5A |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 600V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |