FQI8N60CTU
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2Pak, TO-262AA |
| Weight | 2.084g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 600V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 8A |
| JESD-30 Code | R-PSIP-T3 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.13W Ta 147W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.13W |
| Turn On Delay Time | 16.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.2 Ω @ 3.75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1255pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 7.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Rise Time | 60.5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 64.5 ns |
| Turn-Off Delay Time | 81 ns |
| Continuous Drain Current (ID) | 7.5A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 30A |
| Avalanche Energy Rating (Eas) | 230 mJ |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
