Parameters | |
---|---|
Package / Case | TO-220-3 |
Number of Pins | 3 |
Weight | 1.8g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2007 |
Series | QFET® |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
Termination | Through Hole |
Resistance | 730mOhm |
Voltage - Rated DC | 600V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 9.5A |
Number of Elements | 1 |
Power Dissipation-Max | 156W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 156W |
Turn On Delay Time | 23 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 730m Ω @ 4.75A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 2040pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 9.5A Tc |
Gate Charge (Qg) (Max) @ Vgs | 57nC @ 10V |
Rise Time | 69ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 77 ns |
Turn-Off Delay Time | 144 ns |
Continuous Drain Current (ID) | 9.5A |
Threshold Voltage | 4V |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 600V |
Dual Supply Voltage | 600V |
Avalanche Energy Rating (Eas) | 700 mJ |
Nominal Vgs | 4 V |
Height | 8.79mm |
Length | 10.36mm |
Width | 4.67mm |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Mount | Through Hole |
Mounting Type | Through Hole |