FQP12P20
| Parameters | |
|---|---|
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | -200V |
| Pulsed Drain Current-Max (IDM) | 46A |
| Dual Supply Voltage | -200V |
| Nominal Vgs | -5 V |
| Height | 9.4mm |
| Length | 10.1mm |
| Width | 4.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 470MOhm |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -200V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | -11.5A |
| Lead Pitch | 2.54mm |
| Number of Elements | 1 |
| Power Dissipation-Max | 120W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 120W |
| Turn On Delay Time | 20 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 470m Ω @ 5.75A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
| Rise Time | 195ns |
| Drain to Source Voltage (Vdss) | 200V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 60 ns |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 11.5A |
| Threshold Voltage | -5V |
| JEDEC-95 Code | TO-220AB |
See Relate Datesheet
