Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Weight | 1.8g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2013 |
Series | QFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 3.4Ohm |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | 260 |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PSFM-T3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 75W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 75W |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3.4 Ω @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 565pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 3A Tc |
Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
Rise Time | 30ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 35 ns |
Turn-Off Delay Time | 35 ns |
Continuous Drain Current (ID) | 3A |
JEDEC-95 Code | TO-220AB |
Gate to Source Voltage (Vgs) | 30V |
Drain Current-Max (Abs) (ID) | 3A |
Drain to Source Breakdown Voltage | 600V |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |