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FQP46N15

FQP46N15 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FQP46N15
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 785
  • Description: FQP46N15 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

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Parameters
Drain to Source Breakdown Voltage 150V
Avalanche Energy Rating (Eas) 650 mJ
Height 9.4mm
Length 10.1mm
Width 4.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2000
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 42mOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Current Rating 45.6A
Number of Elements 1
Voltage 150V
Power Dissipation-Max 210W Tc
Element Configuration Single
Current 45A
Operating Mode ENHANCEMENT MODE
Power Dissipation 210W
Turn On Delay Time 35 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 42m Ω @ 22.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 45.6A Tc
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Rise Time 320ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 200 ns
Turn-Off Delay Time 210 ns
Continuous Drain Current (ID) 45.6A
Threshold Voltage 4V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 25V
See Relate Datesheet

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