FQP4N80
| Parameters | |
|---|---|
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 800V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | 3.9A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 130W Tc |
| Factory Lead Time | 1 Week |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Power Dissipation | 130W |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.6 Ω @ 1.95A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Package / Case | TO-220-3 |
| Input Capacitance (Ciss) (Max) @ Vds | 880pF @ 25V |
| Number of Pins | 3 |
| Current - Continuous Drain (Id) @ 25°C | 3.9A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Weight | 1.8g |
| Rise Time | 45ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Transistor Element Material | SILICON |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 35 ns |
| Operating Temperature | -55°C~150°C TJ |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 3.9A |
| Packaging | Tube |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 800V |
| Published | 2000 |
| Avalanche Energy Rating (Eas) | 460 mJ |
| Series | QFET® |
| Height | 9.4mm |
| Length | 10.1mm |
| Width | 4.7mm |
| JESD-609 Code | e3 |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Pbfree Code | yes |
| Part Status | Active |
See Relate Datesheet
