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FQP5N80

N-CHANNEL POWER MOSFET


  • Manufacturer: Rochester Electronics, LLC
  • Nocochips NO: 699-FQP5N80
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 169
  • Description: N-CHANNEL POWER MOSFET (Kg)

Details

Tags

Parameters
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish MATTE TIN
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 140W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6 Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1.25pF @ 25V
Current - Continuous Drain (Id) @ 25°C 4.8A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 4.8A
Pulsed Drain Current-Max (IDM) 19.2A
DS Breakdown Voltage-Min 800V
Avalanche Energy Rating (Eas) 590 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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