FQP5N80
| Parameters | |
|---|---|
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Surface Mount | NO |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | MATTE TIN |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Peak Reflow Temperature (Cel) | NOT APPLICABLE |
| Reach Compliance Code | unknown |
| Time@Peak Reflow Temperature-Max (s) | NOT APPLICABLE |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Qualification Status | COMMERCIAL |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 140W Tc |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.6 Ω @ 2.4A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1.25pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 4.8A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| Drain to Source Voltage (Vdss) | 800V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| JEDEC-95 Code | TO-220AB |
| Drain Current-Max (Abs) (ID) | 4.8A |
| Pulsed Drain Current-Max (IDM) | 19.2A |
| DS Breakdown Voltage-Min | 800V |
| Avalanche Energy Rating (Eas) | 590 mJ |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
