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FQP9N30

FQP9N30 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FQP9N30
  • Package: TO-220-3
  • Datasheet: PDF
  • Stock: 845
  • Description: FQP9N30 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Packaging Tube
Published 2013
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 300V
Technology MOSFET (Metal Oxide)
Current Rating 9A
Number of Elements 1
Power Dissipation-Max 98W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 98W
Turn On Delay Time 16 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 450m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 750pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Rise Time 120ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 48 ns
Turn-Off Delay Time 27 ns
Continuous Drain Current (ID) 9A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain Current-Max (Abs) (ID) 9A
Drain-source On Resistance-Max 0.45Ohm
Drain to Source Breakdown Voltage 300V
Factory Lead Time 1 Week
Avalanche Energy Rating (Eas) 420 mJ
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Radiation Hardening No
Mount Through Hole
Mounting Type Through Hole
RoHS Status ROHS3 Compliant
Package / Case TO-220-3
Lead Free Lead Free
Number of Pins 3
Weight 1.8g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
See Relate Datesheet

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