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FQPF13N50CF

FQPF13N50CF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FQPF13N50CF
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 383
  • Description: FQPF13N50CF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Published 2014
Series FRFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 540mOhm
Terminal Finish Tin (Sn)
Additional Feature FAST SWITCHING
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 13A
Number of Elements 1
Power Dissipation-Max 48W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 48W
Case Connection ISOLATED
Turn On Delay Time 25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 540m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2055pF @ 25V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Rise Time 100ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Factory Lead Time 1 Week
Fall Time (Typ) 100 ns
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Turn-Off Delay Time 130 ns
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Continuous Drain Current (ID) 13A
Number of Pins 3
Threshold Voltage 4V
Weight 2.27g
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Transistor Element Material SILICON
Pulsed Drain Current-Max (IDM) 52A
Operating Temperature -55°C~150°C TJ
Radiation Hardening No
Packaging Tube
REACH SVHC No SVHC
See Relate Datesheet

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