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FQPF33N10

FQPF33N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FQPF33N10
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 623
  • Description: FQPF33N10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Power Dissipation 41W
Case Connection ISOLATED
Turn On Delay Time 15 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 52m Ω @ 9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 18A Tc
Gate Charge (Qg) (Max) @ Vgs 51nC @ 10V
Rise Time 195ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±25V
Fall Time (Typ) 110 ns
Turn-Off Delay Time 80 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 25V
Drain-source On Resistance-Max 0.052Ohm
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 72A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2013
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Current Rating 18A
Number of Elements 1
Power Dissipation-Max 41W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
See Relate Datesheet

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