FQPF3N80CYDTU
| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack, Formed Leads |
| Number of Pins | 3 |
| Weight | 2.565g |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2007 |
| Series | QFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Voltage - Rated DC | 800V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 3A |
| Number of Elements | 1 |
| Power Dissipation-Max | 39W Tc |
| Element Configuration | Single |
| Power Dissipation | 39W |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 4.8 Ω @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 705pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 3A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 16.5nC @ 10V |
| Rise Time | 43.5ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 32 ns |
| Turn-Off Delay Time | 22.5 ns |
| Continuous Drain Current (ID) | 3A |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 800V |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
