Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 Full Pack, Formed Leads |
Number of Pins | 3 |
Weight | 2.565g |
Operating Temperature | -55°C~175°C TJ |
Packaging | Tube |
Published | 2015 |
Series | QFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
HTS Code | 8541.29.00.95 |
Subcategory | Other Transistors |
Technology | MOSFET (Metal Oxide) |
Power Dissipation-Max | 62W Tc |
Element Configuration | Single |
Power Dissipation | 62W |
Turn On Delay Time | 50 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 26m Ω @ 15A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 3600pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 30A Tc |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Rise Time | 450ns |
Drain to Source Voltage (Vdss) | 60V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±25V |
Fall Time (Typ) | 195 ns |
Turn-Off Delay Time | 100 ns |
Continuous Drain Current (ID) | 30A |
Gate to Source Voltage (Vgs) | 25V |
Drain to Source Breakdown Voltage | -60V |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |