FQPF6N60C
| Parameters | |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Rise Time | 45ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 45 ns |
| Turn-Off Delay Time | 45 ns |
| Continuous Drain Current (ID) | 5.5A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Dual Supply Voltage | 600V |
| Nominal Vgs | 4 V |
| Height | 9.19mm |
| Length | 10.16mm |
| Width | 4.7mm |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Weight | 2.27g |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Series | QFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Termination | Through Hole |
| Resistance | 2Ohm |
| Voltage - Rated DC | 600V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 5.5A |
| Number of Elements | 1 |
| Power Dissipation-Max | 40W Tc |
| Element Configuration | Single |
| Power Dissipation | 40W |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 2 Ω @ 2.75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 810pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A Tc |
See Relate Datesheet
