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FQPF9N25CYDTU

MOSFET N-CH 250V 8.8A TO-220F


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FQPF9N25CYDTU
  • Package: TO-220-3 Full Pack, Formed Leads
  • Datasheet: PDF
  • Stock: 844
  • Description: MOSFET N-CH 250V 8.8A TO-220F (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Formed Leads
Number of Pins 3
Weight 2.565g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 38W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 38W
Turn On Delay Time 15 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 430m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8.8A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 85ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 65 ns
Turn-Off Delay Time 90 ns
Continuous Drain Current (ID) 8.8A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 250V
Height 16.07mm
Length 10.36mm
Width 4.9mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
See Relate Datesheet

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