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FQT4N20LTF

FQT4N20LTF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FQT4N20LTF
  • Package: TO-261-4, TO-261AA
  • Datasheet: PDF
  • Stock: 905
  • Description: FQT4N20LTF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi (Kg)

Details

Tags

Parameters
Length 6.5mm
Width 3.56mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 3
Weight 188mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2001
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Resistance 1.35Ohm
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 850mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 2.2W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.2W
Case Connection DRAIN
Turn On Delay Time 7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.35 Ω @ 425mA, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 25V
Current - Continuous Drain (Id) @ 25°C 850mA Tc
Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 5V
Rise Time 70ns
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 15 ns
Continuous Drain Current (ID) 850mA
Threshold Voltage 2V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.85A
Drain to Source Breakdown Voltage 200V
Avalanche Energy Rating (Eas) 52 mJ
Height 1.6mm
See Relate Datesheet

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