Parameters | |
---|---|
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 30 ns |
Turn-Off Delay Time | 12 ns |
Continuous Drain Current (ID) | 1mA |
Threshold Voltage | -4V |
Gate to Source Voltage (Vgs) | 30V |
Drain Current-Max (Abs) (ID) | 1A |
Drain to Source Breakdown Voltage | -100V |
Pulsed Drain Current-Max (IDM) | 4A |
Avalanche Energy Rating (Eas) | 55 mJ |
Height | 1.6mm |
Length | 6.5mm |
Width | 3.56mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-261-4, TO-261AA |
Number of Pins | 3 |
Weight | 188mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2002 |
Series | QFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Resistance | 1.05Ohm |
Subcategory | Other Transistors |
Voltage - Rated DC | -100V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Current Rating | -1A |
JESD-30 Code | R-PDSO-G4 |
Number of Elements | 1 |
Power Dissipation-Max | 2W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2W |
Case Connection | DRAIN |
Turn On Delay Time | 9 ns |
FET Type | P-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.05 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 1A Tc |
Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 10V |
Rise Time | 70ns |
Drain to Source Voltage (Vdss) | 100V |