FQT7N10TF
| Parameters | |
|---|---|
| Number of Pins | 3 |
| Threshold Voltage | 4V |
| Weight | 188mg |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | 100V |
| Transistor Element Material | SILICON |
| Pulsed Drain Current-Max (IDM) | 6.8A |
| Avalanche Energy Rating (Eas) | 50 mJ |
| Operating Temperature | -55°C~150°C TJ |
| Height | 1.7mm |
| Length | 6.7mm |
| Packaging | Tape & Reel (TR) |
| Width | 3.7mm |
| Radiation Hardening | No |
| Published | 2001 |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 350mOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | -100V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | -1A |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 350m Ω @ 850mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 10V |
| Factory Lead Time | 1 Week |
| Rise Time | 24ns |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Mount | Surface Mount |
| Fall Time (Typ) | 19 ns |
| Mounting Type | Surface Mount |
| Turn-Off Delay Time | 13 ns |
| Package / Case | TO-261-4, TO-261AA |
| Continuous Drain Current (ID) | 1.7A |
See Relate Datesheet
