Parameters | |
---|---|
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Rise Time | 92ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 72 ns |
Turn-Off Delay Time | 70 ns |
Continuous Drain Current (ID) | 7.8A |
Gate to Source Voltage (Vgs) | 30V |
Factory Lead Time | 1 Week |
Drain to Source Breakdown Voltage | 200V |
Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
Radiation Hardening | No |
Mount | Through Hole |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Number of Pins | 3 |
Weight | 343.08mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 1998 |
Series | QFET® |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 200V |
Technology | MOSFET (Metal Oxide) |
Current Rating | 7.8A |
Number of Elements | 1 |
Power Dissipation-Max | 50W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 50W |
Turn On Delay Time | 11 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 360m Ω @ 3.9A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 510pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 7.8A Tc |