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FQU10N20CTU

MOSFET N-CH 200V 7.8A IPAK


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FQU10N20CTU
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 114
  • Description: MOSFET N-CH 200V 7.8A IPAK (Kg)

Details

Tags

Parameters
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Rise Time 92ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 72 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 7.8A
Gate to Source Voltage (Vgs) 30V
Factory Lead Time 1 Week
Drain to Source Breakdown Voltage 200V
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Radiation Hardening No
Mount Through Hole
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Weight 343.08mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1998
Series QFET®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 7.8A
Number of Elements 1
Power Dissipation-Max 50W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 50W
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 360m Ω @ 3.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 510pF @ 25V
Current - Continuous Drain (Id) @ 25°C 7.8A Tc
See Relate Datesheet

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