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FQU12N20TU

MOSFET 200V N-Channel QFET


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FQU12N20TU
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 295
  • Description: MOSFET 200V N-Channel QFET (Kg)

Details

Tags

Parameters
Published 2013
Gate to Source Voltage (Vgs) 30V
Series QFET®
Drain Current-Max (Abs) (ID) 9A
JESD-609 Code e3
Drain-source On Resistance-Max 0.28Ohm
Pbfree Code yes
Drain to Source Breakdown Voltage 200V
Part Status Active
Radiation Hardening No
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Lead Free
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 9A
Number of Elements 1
Power Dissipation-Max 2.5W Ta 55W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 13 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 280m Ω @ 4.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 910pF @ 25V
Current - Continuous Drain (Id) @ 25°C 9A Tc
Factory Lead Time 1 Week
Gate Charge (Qg) (Max) @ Vgs 23nC @ 10V
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Mount Through Hole
Rise Time 120ns
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Drive Voltage (Max Rds On,Min Rds On) 10V
Weight 343.08mg
Vgs (Max) ±30V
Transistor Element Material SILICON
Fall Time (Typ) 55 ns
Operating Temperature -55°C~150°C TJ
Turn-Off Delay Time 30 ns
Packaging Tube
Continuous Drain Current (ID) 9A
See Relate Datesheet

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