Parameters | |
---|---|
Rds On (Max) @ Id, Vgs | 4.7 Ω @ 950mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 235pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 1.9A Tc |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Rise Time | 25ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±30V |
Fall Time (Typ) | 28 ns |
Turn-Off Delay Time | 24 ns |
Continuous Drain Current (ID) | 1.9A |
Gate to Source Voltage (Vgs) | 30V |
Drain to Source Breakdown Voltage | 600V |
Pulsed Drain Current-Max (IDM) | 7.6A |
Height | 6.1mm |
Length | 6.6mm |
Width | 2.3mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Number of Pins | 3 |
Weight | 343.08mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2005 |
Series | QFET® |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 4.7Ohm |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 600V |
Technology | MOSFET (Metal Oxide) |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Current Rating | 1.9A |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 2.5W Ta 44W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Turn On Delay Time | 9 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |