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FQU5N40TU

Trans MOSFET N-CH 400V 3.4A 3-Pin(3+Tab) IPAK Tube


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-FQU5N40TU
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: PDF
  • Stock: 486
  • Description: Trans MOSFET N-CH 400V 3.4A 3-Pin(3+Tab) IPAK Tube (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Weight 343.08mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Series QFET®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 400V
Technology MOSFET (Metal Oxide)
Current Rating 3.4A
Number of Elements 1
Power Dissipation-Max 2.5W Ta 45W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.6 Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.4A Tc
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Rise Time 60ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 20 ns
Continuous Drain Current (ID) 3.4A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 400V
Avalanche Energy Rating (Eas) 290 mJ
Height 6.1mm
Length 6.6mm
Width 2.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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