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FS150R17N3E4BOSA1

IGBT MODULE VCES 650V 150A


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-FS150R17N3E4BOSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 631
  • Description: IGBT MODULE VCES 650V 150A (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Chassis Mount
Package / Case Module
Operating Temperature -40°C~150°C
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration Three Phase Inverter
Power - Max 835W
Halogen Free Not Halogen Free
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 150A
Power Dissipation-Max (Abs) 835W
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 150A
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 13.5nF @ 25V
VCEsat-Max 2.3 V
RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
See Relate Datesheet

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