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FS200R07PE4BOSA1

Trans IGBT Module N-CH 650V 200A 600000mW 20-Pin ECONO4-1 Tray


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-FS200R07PE4BOSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 434
  • Description: Trans IGBT Module N-CH 650V 200A 600000mW 20-Pin ECONO4-1 Tray (Kg)

Details

Tags

Parameters
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 200A
Turn Off Time-Nom (toff) 690 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 12nF @ 25V
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 1 Week
Contact Plating Tin
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 20
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Published 2002
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 20
ECCN Code EAR99
Max Power Dissipation 600W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 20
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 600W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 650V
Current - Collector Cutoff (Max) 1mA
Current - Collector (Ic) (Max) 200A
Collector Emitter Saturation Voltage 1.95V
Turn On Time 200 ns
See Relate Datesheet

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