Parameters | |
---|---|
Transistor Application | POWER CONTROL |
Polarity/Channel Type | N-CHANNEL |
Input | Standard |
Collector Emitter Voltage (VCEO) | 1.2kV |
Max Collector Current | 350A |
Current - Collector Cutoff (Max) | 3mA |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 450A |
Turn On Time | 230 ns |
Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 225A |
Turn Off Time-Nom (toff) | 570 ns |
IGBT Type | Trench Field Stop |
NTC Thermistor | Yes |
Input Capacitance (Cies) @ Vce | 13nF @ 25V |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Mount | Screw |
Mounting Type | Chassis Mount |
Package / Case | Module |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C |
Published | 2002 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 29 |
ECCN Code | EAR99 |
Additional Feature | UL RECOGNIZED |
Terminal Position | UPPER |
Terminal Form | UNSPECIFIED |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-XUFM-X29 |
Number of Elements | 6 |
Configuration | Full Bridge |
Case Connection | ISOLATED |
Power - Max | 20mW |