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FS225R12OE4PBOSA1

Trans IGBT Module N-CH 1200V 350A


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-FS225R12OE4PBOSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 770
  • Description: Trans IGBT Module N-CH 1200V 350A (Kg)

Details

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Parameters
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 350A
Current - Collector Cutoff (Max) 3mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 450A
Turn On Time 230 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 225A
Turn Off Time-Nom (toff) 570 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 13nF @ 25V
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 29
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X29
Number of Elements 6
Configuration Full Bridge
Case Connection ISOLATED
Power - Max 20mW
See Relate Datesheet

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