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FS50R07N2E4B11BOSA1

IGBT MODULE 650V 70A 190W


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-FS50R07N2E4B11BOSA1
  • Package: Module
  • Datasheet: PDF
  • Stock: 890
  • Description: IGBT MODULE 650V 70A 190W (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~150°C
Published 2012
Series EconoPACK™ 2
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 25
ECCN Code EAR99
Additional Feature UL APPROVED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X25
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 190W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 650V
Current - Collector (Ic) (Max) 70A
Turn On Time 43 ns
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 50A
Turn Off Time-Nom (toff) 265 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 3.1nF @ 25V
RoHS Status RoHS Compliant
See Relate Datesheet

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